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| VISHAY ILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) Features * * * * * Identical Channel to Channel Footprint ILD620 Crosses to TLP620-2 ILQ620 Crosses to TLP620-4 High Collector-Emitter Voltage, BVCEO = 70 V Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection * Isolation Test Voltage 5300 VRMS Dual Channel A/C 1 A/C 2 A/C A/C 3 4 8 7 6 5 C E C E Agency Approvals * UL File #E52744 System Code H or J * CSA 93751 * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * BSI IEC60950 IEC60965 Quad Channel A/C 1 A/C 2 A/C 3 A/C 4 A/C 5 A/C 6 A/C 16 C 15 E 14 C 13 E 12 C 11 E 10 C 9E 7 A/C 8 Description The ILD620/ ILQ620 and ILD620GB/ ILQ620GB are multi-channel input phototransistor optocouplers that use inverse parallel GaAs IRLED emitter and high gain NPN silicon phototransistors per channel. These devices are constructed using over/under leadframe optical coupling and double molded insulation resulting in a withstand test voltage of 5300 VRMS. The LED parameters and the linear CTR characteristics make these devices well suited for AC voltage detection. the ILD/Q620GB with its low IF quaranteed CTRCEsat minimizes power dissipation of the AC voltage detection network that is placed in series with the LEDs. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. i179053 Order Information Part ILD620 ILD620GB ILQ620 ILQ620GB ILD620-X007 ILD620-X009 ILD620GB-X009 ILQ620-X009 ILQ620GB-X009 Remarks CTR > 50 %, DIP-8 CTR > 100 %, DIP-8 CTR > 50 %, DIP-16 CTR > 100 %, DIP-16 CTR > 50 %, SMD-8 (option 7) CTR > 50 %, SMD-8 (option 9) CTR > 100 %, SMD-8 (option 9) CTR > 50 %, SMD-16 (option 9) CTR > 100 %, SMD-16 (option 9) For additional information on the available options refer to Option Information. Document Number 83653 Rev. 1.3, 26-Apr-04 www.vishay.com 1 ILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors Absolute Maximum Ratings VISHAY Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Forward current Surge current Power dissipation Derate linearly from 25 C Test condition Symbol IF IFSM Pdiss Value 60 1.5 100 1.3 Unit mA A mW mW/C Output Parameter Collector-emitter breakdown voltage Collector current t < 1.0 sec: Power dissipation Derate from 25 C Test condition Symbol BVCEO IC IC Pdiss Value 70 50 100 150 2.0 Unit V mA mA mW mW/C Coupler Parameter Isolation test voltage Package dissipation Derate from 25 C Package dissipation Derate from 25 C Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Junction temperature Soldering temperature 2.0 mm from case bottom RIO RIO Tstg Tamb Tj Tsld ILQ620 ILQ620GB Test condition t = 1.0 sec. ILD620 ILD620GB Part Symbol VISO Value 5300 400 400 5.33 500 500 6.67 7.0 7.0 10 12 Unit VRMS mW mW mW/C mW mW mW/C mm mm C C C C 1011 - 55 to + 150 - 55 to + 100 100 260 www.vishay.com 2 Document Number 83653 Rev. 1.3, 26-Apr-04 VISHAY Electrical Characteristics ILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Forward current Capacitance Thermal resistance, junction to lead Test condition IF = 10 mA VR = 0.7 V VF = 0 V, f = 1.0 MHz Symbol VF IF CO RTHJL Min 1.0 Typ. 1.15 2.5 25 750 Max 1.3 20 Unit V A pF K/W Output Parameter Collector-emitter capacitance Collector-emitter leakage current Thermal resistance, junction to lead Test condition VCE = 5.0 V, f = 1.0 MHz VCE = 24 V TA = 85 C, VCE = 24 V Symbol CCE ICEO ICEO RTHJL Min Typ. 6.8 10 2.0 500 100 50 Max Unit pF nA A K/W Coupler Parameter Off-state collector current Collector-emitter saturation voltage Test condition VF = 0.7 V, VCE = 24 V IF = 8.0 mA, ICE = 2.4 mA ILD620 ILQ620 IF = 1.0 mA, ICE = 0.2 mA ILD620GB ILQ620GB Part Symbol ICE(OFF) VCEsat VCEsat VCEsat VCEsat Min Typ. 1.0 Max 10 0.4 0.4 0.4 0.4 Unit A V V V V Current Transfer Ratio Parameter Channel/Channel CTR match CTR symmetry Current Transfer Ratio (collector-emitter saturated) Current Transfer Ratio (collector-emitter) Current Transfer Ratio (collector-emitter saturated) Current Transfer Ratio (collector-emitter) Test condition IF = 5.0 mA, VCE = 5.0 V ICE(IF = - 5.0 mA)/ ICE(IF = + 5.0 mA) IF = 1.0 mA, VCE = 0.4 V ILD620 ILQ620 IF = 5.0 mA, VCE = 5.0 V ILD620 ILQ620 IF = 1.0 mA, VCE = 0.4 V ILD620GB ILQ620GB IF = 5.0 mA, VCE = 5.0 V ILD620GB ILQ620GB Part Symbol CTRX/CTRY ICE(RATIO) CTRCEsat CTRCEsat CTRCE CTRCE CTRCEsat CTRCEsat CTRCE CTRCE 50 50 30 30 100 100 200 200 600 600 Min 1 to 1 0.5 60 60 80 80 600 600 Typ. Max 3 to 1 2.0 % % % % % % % % Unit Document Number 83653 Rev. 1.3, 26-Apr-04 www.vishay.com 3 ILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors Switching Characteristics Non-saturated Parameter On time Rise time Off time Fall time Propagation H-L Propagation L-H Saturated Parameter On time Rise time Off time Fall time Propagation H-L Propagation L-H Test condition IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V Symbol ton tr toff tf tPHL tPLH Min Typ. 4.3 2.8 2.5 11 2.6 7.2 Max Test condition IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP Symbol ton tr toff tf tPHL tPLH Min Typ. 3.0 20 2.3 2.0 1.1 2.5 Max VISHAY Unit s s s s s s Unit s s s s s s Typical Characteristics (Tamb = 25 C unless otherwise specified) IF = 10 mA VCC = 5 V VO F = 10 KHz, DF = 50% VCC = 5 V RL = 1 k F = 10 KHz, DF = 50% RL = 75 IF = 10 mA VO iild620_01 iild620_02 Fig. 1 Non-saturated Switching Timing Fig. 2 Saturated Switching Timing www.vishay.com 4 Document Number 83653 Rev. 1.3, 26-Apr-04 VISHAY ILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors ICEO - Collector-Emitter - nA IF 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 iild620_06 tPLH VO tPLH tS 50% Vce = 10 V Typical tD iild620_03 tR ton toff tF 0 20 40 60 80 100 TA - Ambient Temperature - C Fig. 3 Non-saturated Switching Timing Fig. 6 Collector-Emitter Leakage vs. Temperature 120 IF - Maximum LED Current - mA IF 100 80 60 40 20 0 -60 TJ (MAX) = 100 C VO tD tR t PLH VTH = 1.5 V t PHL tS tF iild620 _04 -40 -20 0 20 40 60 80 100 Ta - Ambient Temperature - C iild620_07 Fig. 4 Saturated Switching Timing Fig. 7 Maximum LED Current vs. Ambient Temperature 60 I F - LED Forward Current - mA 200 85 C PLED - LED Power - mW 40 20 0 -20 -40 -60 -1.5 -1.0 -0.5 0.0 25 C 150 -55 C 100 50 0.5 1.0 1.5 iild620_08 iild620_05 V F - LED Forward Voltage - V 0 -60 -40 -20 0 20 40 60 Ta - Ambient Temperature - C 80 100 Fig. 5 LED Forward Current vs.Forward Voltage Fig. 8 Maximum LED Power Dissipation Document Number 83653 Rev. 1.3, 26-Apr-04 www.vishay.com 5 ILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors VISHAY CTRNF - Normalized CTR Factor IC- Normalized Collector Current 100 50 2.0 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V 10 5.0 2.5 1.0 0.5 Normalized to IF = 10 mA VCE = 5 V ILD/Q620GB 1.5 ILD/Q620 1.0 NCTRce 0.5 NCTRce(sat) TA = 100 C 0.0 .1 1 10 IF - LED Current - mA 100 0.1 1 5 10 20 Forward Current - IF mA iild620_09 iild620_12 Fig. 9 Collector Current vs. Diode Forward Current Fig. 12 Normalization Factor for Non-saturated and Saturated CTR vs. IF CTRNF - Normalized CTR Factor 2.0 If(pk) - Peak LED Current - mA 10000 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce Duty Factor 1000 .005 .01 .02 .05 .1 .2 .5 1.5 t DF = /t 1.0 NCTRce(sat) TA = 50 C 0.0 .1 1 10 IF - LED Current - mA 100 0.5 100 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t - LED Pulse Duration - s iild620_10 iild620_13 Fig. 10 Normalization Factor for Non-saturated and Saturated CTR vs. IF Fig. 13 Peak LED Current vs. Pulse Duration, Tau CTRNF - Normalized CTR Factor 2.0 PDET - Detector Power - mW 200 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce 1.5 150 1.0 100 0.5 NCTRce(sat) TA = 70 C 50 0.0 .1 1 10 IF - LED Current - mA 100 0 -60 iild620_14 -40 -20 0 20 40 60 80 100 Ta - Ambient Temperature - C iild620_11 Fig. 11 Normalization Factor for Non-saturated and Saturated CTR vs. IF Fig. 14 Maximum Detector Power Dissipation www.vishay.com 6 Document Number 83653 Rev. 1.3, 26-Apr-04 VISHAY ILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors 1000 ICE - Collector Current - mA 100 Rth = 500 C/W 10 25 C 50 C 75 C 90 C 1 .1 .1 10 1 VCE - Collector-Emitter Voltage - V 100 iild620_15 Fig. 15 Maximum Collector Current vs. Collector Voltage Package Dimensions in Inches (mm) pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 ISO Method A 3 2 1 .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 .300 (7.62) typ. .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 10 3-9 .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Document Number 83653 Rev. 1.3, 26-Apr-04 www.vishay.com 7 ILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors Package Dimensions in Inches (mm) VISHAY pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16 ISO Method A .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56) i178007 .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27) 10 typ. 3-9 .008 (.20) .012 (.30) Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. .0098 (.249) .020 (.51) .040 (1.02) .012 (.30) typ. .315 (8.00) min. 15 max. 18494 www.vishay.com 8 Document Number 83653 Rev. 1.3, 26-Apr-04 VISHAY ILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83653 Rev. 1.3, 26-Apr-04 www.vishay.com 9 |
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